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| NCV8440 Protected Power MOSFET 2.6 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection Benefits * High Energy Capability for Inductive Loads * Low Switching Noise Generation Features http://onsemi.com VDSS (Clamped) 52 V RDS(ON) TYP 95 mW @ 10 V ID MAX 2.6 A Drain (Pins 2, 4) * * * * * * Diode Clamp Between Gate and Source ESD Protection - HBM 5000 V Active Over-Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance These are Pb-Free Devices Gate (Pin 1) Overvoltage Protection Applications * Automotive and Industrial Markets: and Control Changes ESD Protection * NCV Prefix for Automotive and Other Applications Requiring Site Solenoid Drivers, Lamp Drivers, Small Motor Drivers Source (Pin 3) MARKING DIAGRAM DRAIN SOT-223 CASE 318E STYLE 3 1 = Gate 2 = Drain 3 = Source 1 GATE 4 AYW F9N05 G G 2 3 SOURCE DRAIN A = Assembly Location Y = Year W = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NCV8440STT1G NCV8440STT3G Package SOT-223 (Pb-Free) SOT-223 (Pb-Free) Shipping 1000/Tape & Reel 4000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 December, 2009 - Rev. 5 1 Publication Order Number: NCV8440/D NCV8440 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Internally Clamped Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C - Single Pulse (tp = 10 ms) (Note 1) Symbol VDSS VGS ID IDM PD TJ, Tstg EAS VLD RqJA RqJA TL Value 52-59 15 2.6 10 1.69 -55 to 150 110 60 74 169 260 Unit V V A W C mJ V C/W Total Power Dissipation @ TA = 25C (Note 1) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy (VDD = 50 V, ID(pk) = 1.17 A, VGS = 10 V, L = 160 mH, RG = 25 W) Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms) Thermal Resistance, Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to a FR4 board using 1 pad size, (Cu area 1.127 in2). 2. When surface mounted to a FR4 board using minimum recommended pad size, (Cu area 0.412 in2). + ID DRAIN IG + GATE VDS VGS SOURCE - - Figure 1. Voltage and Current Convention http://onsemi.com 2 NCV8440 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 V, ID = 1.0 mA, TJ = 25C) (VGS = 0 V, ID = 1.0 mA, TJ = -40C to 125C) (Note 4) Temperature Coefficient (Negative) Zero Gate Voltage Drain Current (VDS = 40 V, VGS = 0 V) (VDS = 40 V, VGS = 0 V, TJ = 125C) (Note 4) Gate-Body Leakage Current (VGS = 8 V, VDS = 0 V) (VGS = 14 V, VDS = 0 V) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 100 mA) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 3.5 V, ID = 0.6 A) (VGS = 4.0 V, ID = 1.5 A) (VGS = 10 V, ID = 2.6 A) Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance Input Capacitance Output Capacitance Transfer Capacitance 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Not subject to production testing. 5. Switching characteristics are independent of operating junction temperatures. VDS = 25 V, VGS = 0 V, f = 10 kHz VDS = 35 V, VGS = 0 V, f = 10 kHz Ciss Coss Crss Ciss Coss Crss 155 60 25 170 70 30 pF pF VGS(th) 1.1 1.5 -4.1 135 150 95 3.8 1.9 V mV/C mW V(BR)DSS 52 50.8 55 54 -9.3 59 59.5 V V mV/C mA Symbol Min Typ Max Unit IDSS 10 25 10 IGSS 35 mA RDS(on) 180 160 110 gFS Mhos http://onsemi.com 3 NCV8440 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge VGS = 4.5 V, VDS = 40 V, ID = 2.6 A (Note 3) Gate Charge VGS = 4.5 V, VDS = 15 V, ID = 1.5 A (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse Recovery Time IS = 1.5 A, VGS = 0 V, dIs/dt = 100 A/ms (Note 3) Reverse Recovery Stored Charge ESD CHARACTERISTICS (Note 4) Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Not subject to production testing. 5. Switching characteristics are independent of operating junction temperatures. ESD 5000 500 V IS = 2.6 A, VGS = 0 V (Note 3) IS = 2.6 A, VGS = 0 V, TJ = 125C VSD trr ta tb QRR 0.81 0.66 730 200 530 6.3 mC 1.5 V ns VGS = 10 V, VDD = 15 V, ID = 2.6 A, RD = 5.8 W VGS = 4.5 V, VDD = 40 V, ID = 1.0 A, RD = 40 W VGS = 4.5 V, VDD = 40 V, ID = 2.6 A, RD = 15.4 W td(on) tr td(off) tf td(on) tr td(off) tf td(on) tr td(off) tf QT Q1 Q2 QT Q1 Q2 375 1525 1530 1160 325 1275 1860 1150 190 710 2220 1180 4.5 0.9 2.6 3.9 1.0 1.7 nC nC ns ns ns Symbol Min Typ Max Unit http://onsemi.com 4 NCV8440 TYPICAL PERFORMANCE CURVES ILmax, MAX SWITCH-OFF CURRENT (A) 10 Emax, MAX SWITCHING ENERGY (mJ) 25C 100C 100 150C 25C 100C 150C 1 0.1 1 10 100 10 0.1 1 10 100 L, LOAD INDUCTANCE (mH) L, LOAD INDUCTANCE (mH) Figure 1. Single Pulse Maximum Switch-off Current vs. Load Inductance 10 ID, DRAIN CURRENT (AMPS) 8 6 4 2 0 10 ID, DRAIN CURRENT (AMPS) TJ = 25C 4V 3.8 V 3.6 V 3.4 V 3.2 V 3V 2.8 V 2.6 V 2.4 V 0 1 2 3 4 5 Figure 2. Single Pulse Maximum Switching Energy vs. Load Inductance VGS = 10 V 5V VDS 10 V 8 6 4 2 0 TJ = 150C TJ = 25C 1 1.5 2 TJ = -40C 2.5 3 3.5 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3. On-State Output Characteristics 350 ID = 2 A 300 150C RDS(on) (mW) RDS(on) (mW) 250 200 150 100 50 -40C 3 4 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 25C 250 200 150 300 Figure 4. Transfer Characteristics 150C, VGS = 5 V 150C, VGS = 10 V 25C, VGS = 5 V 100 -40C, VGS = 5 V 50 1 2 3 4 5 25C, VGS = 10 V -40C, VGS = 10 V 6 7 8 9 10 ID, DRAIN CURRENT (A) Figure 5. RDS(on) vs. Gate-Source Voltage Figure 6. RDS(on) vs. Drain Current http://onsemi.com 5 NCV8440 TYPICAL PERFORMANCE CURVES 2.00 1.75 NORMALIZED RDS(on) 1.50 1.25 1.00 0.75 0.50 -40 -20 VGS = 10 V VGS = 5 V ID = 2 A NORMALIZED VGS(th) (V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -40 -20 ID = 100 mA, VDS = VGS 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 7. Normalized RDS(on) vs. Temperature 1000 VGS = 0 V IS, SOURCE CURRENT (A) 100 10 IDSS (mA) 1 0.1 0.01 0.001 10 25C 15 20 25 30 35 40 45 50 VDS , DRAIN-TO-SOURCE VOLTAGE (V) 8 6 4 2 0 0.5 10 Figure 8. Normalized Threshold Voltage vs. Temperature 150C 100C 150C 25C 0.6 0.7 0.8 -40C 0.9 1 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Drain-to-Source Leakage Current Figure 10. Source-Drain Diode Forward Characteristics VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 4 3 2 1 0 VDS QGS QT VGS 40 30 20 10 0 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 500 Ciss VGS = 0 V TJ = 25C C, CAPACITANCE (pF) 400 VDS = 0 V 300 200 100 0 10 Crss QGD Ciss Coss Crss 5 VGS 0 VDS 5 10 15 20 25 30 35 ID = 2.6 A TJ = 25C 0 1 2 4 3 QG, TOTAL GATE CHARGE (nC) 5 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Capacitance Variation Figure 12. Gate-to-Source Voltage vs. Total Gate Charge http://onsemi.com 6 NCV8440 TYPICAL PERFORMANCE CURVES 3000 2500 2000 TIME (ns) 1500 1000 500 0 tr td(on) 4 5 6 7 VGS (V) 8 9 10 100 1 10 100 RG (W) 1000 10,000 td(on) VDD = 40 V VDD = 15 V td(off) 10,000 VDD = 40 V VDD = 15 V td(off) TIME (ns) ID = 2.6 A RG = 0 W tf 1000 tf tr Figure 13. Resistive Load Switching Time vs. Gate-Source Voltage 10,000 110 VDD = 40 V VDD = 15 V td(off) TIME (ns) tf 1000 tr RqJA (C/W) 90 80 70 60 50 100 Figure 14. Resistive Load Switching Time vs. Gate Resistance (VGS = 5 V, ID = 2.6 A) PCB Cu thickness, 1.0 oz td(on) 100 PCB Cu thickness, 2.0 oz 0 50 100 150 200 250 300 350 400 450 500 COPPER HEAT SPREADER AREA (mm2) 1 10 100 RG (W) 1000 10,000 Figure 15. Resistive Load Switching Time vs. Gate Resistance (VGS = 10 V, ID = 2.6 A) 100 50% Duty Cycle RqJA 788 mm2 C/W 20% 10 10% 5% 2% 1 1% Figure 16. RqJA vs. Copper Area Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 17. Transient Thermal Resistance http://onsemi.com 7 NCV8440 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - 4 HE E 1 2 3 e1 b e A q L1 C DIM A A1 b b1 c D E e e1 L1 HE q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 0.08 (0003) A1 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 8 NCV8440/D |
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